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產品概述/Product Introduction：

? 氣相外延是一種單晶薄層生長方法

Vapor phase epitaxy is a single crystal thin layer growth method

? 氣相外延廣義上是化學氣相沉積的一種特殊方式，其生長薄層的晶體結構是單晶襯底的延續，而且與襯底的晶向保持對應的關系

Vapor phase epitaxy is a special method of chemical vapor deposition in a broad sense, in which the crystal structure of the thin layer is a continuation of the single crystal substrate and keeps correspond-ing relationship with the crystal orientation of the substrate

? 在半導體科學技術的發展中，氣相外延發揮了重要作用

In the development of semiconductor science and technology, gas phase epitaxy has played an import-ant role

? 砷化鎵(GaAs) 氣相外延技術生長的砷化鎵(GaAs) 純度高、電學特性好，廣泛的應用于霍爾器件、耿氏二極管、場效應晶體管等微波器件中

Gallium arsenide (GaAs) grown by gas phase epitaxy technology has high purity and good electrical properties, and is widely used in Hall devices, Gunn diodes, field effect transistors and other microwave devices

產品特點/Product Characteristics：

? 本設備的生長室采用立式石英反應生長室。整個設備包括以下各分系統:反應生長室系統、加熱系統、襯底支架傳動系統、氣路系統、水冷卻系統、報警系統、氣體供給與純化系統、氣動系統、控制系統

The growth chamber of this equipment adopts vertical quartz reaction growth chamber.The wholeequipment includes the following subsystems: reaction growth chamber system, heating system,substrate support transmission system, gas path system, water cooling system, alarm system, gassupply and purification system, pneumatic system and control system

? 旋轉速度**可達3000轉

The maximum rotation speed can reach 3000 revolutions

? 多坩堝轉換

Multi-crucible conversion.

應用范圍/Scope：

? 廣泛的應用于霍爾器件、耿氏二極管、場效應晶體管等微波器件中

lt is widely used in Hall devices,Gunn diodes, field effect transistors and other microwave devices